View IRLL014PBF_709348.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PD - 95387
IRLL014PBF
HEXFET(R) Power MOSFET
l l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Logic-Level Gate Drive RDS(on) Specified at VGS=4V & 5V Fast Switching Ease of Paralleling Lead-Free
D
VDSS = 60V RDS(on) = 0.20
G S
ID = 2.7A
Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pick-andplace as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of grreater than 1.25W is possible in a typical surface mount application.
SOT-223
Absolute Maximum Ratings
Parameter
ID @ Tc = 25C ID @ Tc = 100C IDM PD @Tc = 25C PD @TA = 25C Continuous Drain Current, VGS @ 10 V Continuous Drain Current, VGS @ 10 V Pulsed Drain Current Power Dissipation Power Dissipation (PCB Mount)** Linear Derating Factor Linear Derating Factor (PCB Mount)** Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range Soldewring Temperature, for 10 seconds
Max.
2.7 1.7 22 3.1 2.0 0.025 0.017 -/+10 100 2.7 0.31 4.5 -55 to + 150
300 (1.6mm from case)
Units
A W
W/C
VGS EAS IAR EAR dv/dt TJ, TSTG
V mJ A mJ V/ns
C
Thermal Resistance
Parameter
RJC RJA Junction-to-PCB Junction-to-Ambient. (PCB Mount)**
Typ.
--- ---
Max.
40 60
Units
C/W
** When mounted on 1'' SQUARE pcb (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994.
www.irf.com
1
06/10/04
IRLL014PBF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss
Min. 60 --- --- --- 1.0 3.2 --- --- --- --- --- --- --- --- --- --- -- --- --- --- --- ---
Typ. --- 0.073 --- --- --- --- --- --- --- --- --- --- --- 9.3 110 17 26 4.0 6.0 400 170 42
Max. Units Conditions --- V VGS = 0V, I D = 250A --- V/C Reference to 25C, ID = 1mA 0.20 VGS = 5.0V, I D = 1.6A 0.28 VGS = 4.0V, ID = 1.4A 2.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 1.6 A 25 VDS = 60V, VGS = 0V A 250 VDS = 48V, VGS = 0V, TJ = 125C 100 VGS = 10V nA -100 VGS = -10V 8.4 ID = 10A 3.5 nC VDS = 48V 6.0 VGS = 5.0V, See Fig. 6 and 13 --- VDD = 30V --- ID = 10A ns --- RG = 12 --- RD = 2.8 , See Fig. 10 --- --- --- --- --- pF nH Between lead, 6mm(0.25in) from package and center of die contact. VGS = 0V VDS = 25V = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr ton Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions MOSFET symbol 2.7 showing the A integral reverse 22 p-n junction diode. --- --- 1.6 V TJ = 25C, IS = 2.7A, VGS = 0V --- 65 130 ns TJ = 25C, IF = 10A --- 0.33 0.65 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD 10A, di/dt 90A/s, VDD V(BR)DSS,
TJ 150C
VDD=25V, starting TJ = 25C, L =16 mH
RG = 25, IAS = 2.7A. (See Figure 12)
Pulse width 300s; duty cycle 2%.
2
www.irf.com
IRLL014PBF
www.irf.com
3
IRLL014PBF
4
www.irf.com
IRLL014PBF
www.irf.com
5
IRLL014PBF
6
www.irf.com
IRLL014PBF
SOT-223 (TO-261AA) Package Outline
Dimensions are shown in milimeters (inches)
SOT-223 (TO-261AA) Part Marking Information
HEXFET PRODUCT MARKING
T HIS IS AN IRFL014
PART NUMBER INT ERNAT IONAL RECT IFIER LOGO
LOT CODE AXXXX
F L014 314P
A = AS S EMBLY S IT E DAT E CODE CODE (YYWW) YY = YEAR WW = WEEK P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL)
T OP
BOT T OM
www.irf.com
7
IRLL014PBF
SOT-223 (TO-261AA) Tape & Reel Information
Dimensions are shown in milimeters (inches)
4.10 (.161) 3.90 (.154) 1.85 (.072) 1.65 (.065) 0.35 (.013) 0.25 (.010)
TR
2.05 (.080) 1.95 (.077)
7.55 (.297) 7.45 (.294)
7.60 (.299) 7.40 (.292) 1.60 (.062) 1.50 (.059) TYP. FEED DIRECTION 12.10 (.475) 11.90 (.469) 7.10 (.279) 6.90 (.272)
16.30 (.641) 15.70 (.619)
2.30 (.090) 2.10 (.083)
NOTES : 1. CONTROLLING DIMENSION: MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES.
13.20 (.519) 12.80 (.504) 15.40 (.607) 11.90 (.469) 4
330.00 (13.000) MAX.
50.00 (1.969) MIN.
NOTES : 1. OUTLINE COMFORMS TO EIA-418-1. 2. CONTROLLING DIMENSION: MILLIMETER.. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
18.40 (.724) MAX. 14.40 (.566) 12.40 (.488)
4
3
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 06/04
8
www.irf.com

▲Up To Search▲

Price & Availability of IRLL014PBF

	To Download IRLL014PBF Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .